发明名称 Electric heating element with thermally conductive layer
摘要 The thermally conductive semiconductor layer (51) is connectable to at least two electric contacts (52,53) and is preferably formed by a thin film deposition process, typically by chemical vapour deposition (CVD). The thermally conductive layer is deposited on an insulating substrate, preferably of ceramic material. The thermally conductive layer may be bent, at least partly and/or contain steps, may be enclosed in at least one dimension, and may be laterally extended in at least one direction of more than 1 mm, preferably 10 to 300 mm. The lay thickness is 0.1 to 5 microns, typically 2 microns.
申请公布号 DE19720880(A1) 申请公布日期 1998.11.19
申请号 DE19971020880 申请日期 1997.05.17
申请人 E.G.O. ELEKTRO-GERAETEBAU GMBH, 75038 OBERDERDINGEN, DE 发明人 BOGDANSKI, FRANZ, DR., 75038 OBERDERDINGEN, DE;LUTZ, OSE, DR., 75447 STERNENFELS, DE
分类号 H05B3/26;H05B3/42;(IPC1-7):H05B3/10;H01L21/320;H01L29/86 主分类号 H05B3/26
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