发明名称 A CONTROLLED CLEAVAGE PROCESS
摘要 A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) in a selected manner through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles have a relatively high concentration to define a donor substrate material (12) above the selected depth and the particles for a pattern at the selected depth. An energy source such as pressurized fluid is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.
申请公布号 CA2290104(A1) 申请公布日期 1998.11.19
申请号 CA19982290104 申请日期 1998.05.11
申请人 SILICON GENESIS CORPORATION 发明人 HENLEY, FRANCOIS J.;CHEUNG, NATHAN W.
分类号 H01L21/265;B26D3/28;B26F3/00;H01L21/02;H01L21/20;H01L21/304;H01L21/425;H01L21/762;H01L27/12;(IPC1-7):H01L21/425 主分类号 H01L21/265
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