| 摘要 |
This invention utilizes a large volume plasma processor, which comprises a toroidal containment vessel (11), iron core yoke and field bias coils (15, 25), verticle field coils (23) and antenna (31), to completely ionize any feedstock material input via injector (30) and deposit the ionized and unionized species of elements of the feedstock material on deposition stages (45). Apparatus is provided for generating a toroidal, high temperature, low density plasma in the plasma processor. Key aspects of the method provide for (a) controlling temperature by rapid heating via ohmic heating coils (21, 41) and (b) maintaining toroidal plasma current by rapid application of increased driving voltages. The invention provides a large surface area source of any desired elements to increase safety and thruput in microchip fabrication. Other applications include nanotechnology fabrication and improvement of surface properties of materials.
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