METHOD OF DOPING SILICON, METAL DOPED SILICON, METHOD OF MAKING SOLAR CELLS, AND SOLAR CELLS

摘要

A low temperature process for forming a metal doped silicon layer in which an amorphous silicon layer is deposited onto a substrate at low temperatures, with a metal layer then deposited upon the silicon layer. This structure is then annealed at low temperatures (in the range of 170 °C to 600 °C) to form a metal doped polycrystalline silicon having greater than about 1 x 1020 dopant atoms per cm3 of silicon.