发明名称 Electroplating using an electrical current density modifier
摘要 An electroplating system 30 makes electrical current density across a semiconductor device substrate 20 surface more uniform during plating to allow for a more uniform or tailored deposition of a conductive material. The electrical current density modifiers 364 and 37 reduce the electrical current density near the edge of the substrate 20. By reducing the current density near the edge of the substrate 20, the plating becomes more uniform or can be tailored so that slightly more material is plated near the center of the substrate 20. The system can also be modified so that the material that electrical current density modifier portions 364 on structures 36 can be removed without having to disassemble any portion of the head 35 or otherwise remove the structures 36 from the system. This in-situ cleaning reduces the amount of equipment downtime, increases equipment lifetime, and reduces particle counts.
申请公布号 GB2325242(A) 申请公布日期 1998.11.18
申请号 GB19980009856 申请日期 1998.05.11
申请人 * MOTOROLA, INC 发明人 CINDY REIDSEMA * SIMPSON;MATTHEW T * HERRICK;GREGORY S * ETHERINGTON;JAMES DEREK * LEGG
分类号 C25D7/00;C25D5/00;C25D7/12;C25D17/00;H01L21/288;(IPC1-7):C25D5/00;C25D17/06 主分类号 C25D7/00
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