发明名称 |
Method for forming re-entrant photoresist lift-off profile for thin film device processing and a thin film device made thereby |
摘要 |
A method for forming a re-entrant photoresist lift-off profile for thin film device processing of particular utility in conjunction with self-aligned sputtered films, such as permanent magnet ("PM") films, for use in magnetoresistive ("MR") read heads as well as a device made thereby. Photoresist is patterned in a conventional manner upon the thin film layers overlying a suitable substrate and the photoresist is then exposed to a suitable developer resulting in photoresist regions having substantially vertical sidewalls. An electron beam, or other suitable energy source, is then utilized to cross-link (or render relatively insoluble) the upper portion of the positive tone resist image by accelerating a sufficient dose of electrons into the photoresist to a well controlled depth. A second electron beam is then distributed throughout the entire photoresist thickness to render the lower portion of it relatively more soluble in a developer. The resist is then developed for a predetermined time to achieve an undercut in the lower portion of the photoresist. <IMAGE> <IMAGE> <IMAGE> |
申请公布号 |
EP0779557(A3) |
申请公布日期 |
1998.11.18 |
申请号 |
EP19960308492 |
申请日期 |
1996.11.25 |
申请人 |
QUANTUM PERIPHERALS COLORADO, INC. |
发明人 |
JENNISON, MICHAEL J. |
分类号 |
G03F7/26;G03F7/20;G11B5/31;G11B5/39;(IPC1-7):G03F7/20 |
主分类号 |
G03F7/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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