| 发明名称 |
|
| 摘要 |
A trench capacitor and a method of forming same within an integrated circuit. The capacitor is includes a first plate electrode having a surface area comprised of an inner surface area of the trench and an outer surface area of an upstanding pillar structure that is formed within the trench and which extends upwardly from a bottom surface thereof. The pillar structure (22) is physically and electrically contiguous with the semiconductor substrate (10) and has the same type of electrical conductivity. The capacitor further includes a second plate electrode comprised of a region of electrically conductive material (26) that substantially fills a volume of the trench not occupied by the pillar structure (22). The capacitor further includes a thin layer (24) of dielectric material interposed between the first plate electrode and the second plate electrode. The second plate electrode is conductively coupled to a planar access device through a conductive, self-aligned surface strap (32). <IMAGE> |
| 申请公布号 |
JP2826218(B2) |
申请公布日期 |
1998.11.18 |
| 申请号 |
JP19910238907 |
申请日期 |
1991.08.27 |
| 申请人 |
INTAANASHONARU BIJINESU MASHIINZU CORP |
发明人 |
SETSUKAMADASHIRU UERAYUDOHAN RAJIIUAKUMARU |
| 分类号 |
H01L27/04;H01L21/822;H01L21/8242;H01L27/10;H01L27/108 |
主分类号 |
H01L27/04 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
