Method for fabricating a semiconductor device including a semi-insulating semiconductor layer

摘要

A method for fabricating a compound semiconductor device having a semi-insulating layer (22) of a group III-V compound semiconductor material that contains arsenic as a group V element. The method includes a step of growing the semi-insulating layer on a substrate (21) from a source gas of the group V element that contains both arsine and an organic compound of arsenic, wherein arsine and the organic compound of arsenic are used simultaneously with a mixing ratio to achieve a desired high resistivity in the semi-insulating layer.