| 摘要 |
A packaged IC device 100 has a multilayer interconnection substrate 50, a metal thermal conductive layer 35 and a through hole 36. During manufacture the IC 40 is placed within the through hole and held in place by vacuum means (not shown) while bond pads of the IC are connected to the interconnection substrate and the IC is encapsulated, leaving a surface 40a exposed. This one exposed surface dissipates heat generated within the IC. Other disclosed embodiments include an additional metal thermal conductive layer attached to the exposed IC surface of the device of Fig.3, an additional metal thermal conductive layer with a central aperture attached to the exposed IC surface, and a device having no thermal layer with a through hole having a metal layer embedded in a dielectric attached to the surface of the multilayer substrate and the exposed IC surface. |
