HIGH VOLTAGE GENERATING CIRCUIT FOR SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a high voltage generating circuit capable of preventing high voltage from being boosted to the prescribed level or above at the high speed operation. SOLUTION: An electric charge pumping means 10 is enabled by a control signal A, and performs pumping of electric charges with the prescribed pumping rate. A capacitor C fills electric charges being made pumping, and outputs voltage Vpp . A clamp means 15 bypasses surplus electric charges to power source voltage when voltage Vpp is a first voltage level or above. A first voltage level detecting means 13 outputs a first control signal A when voltage Vpp is lower than a second voltage level. A detecting means 20 outputs a gate signal SLOW when voltage Vpp is boosted to a third voltage level or more and an operation a cycle of a signal RASB is made short. A gate means 28 applies the operation signal RASB to the electric charge pumping means 10 based on the gate signal SLOW.