发明名称 DEPOSITION OF LIQUID RAW MATERIAL AND DEVICE
摘要 PROBLEM TO BE SOLVED: To prevent the generation amount, mixing ratio and concentration of raw material vapor from being changed by a method wherein a liquid raw material is made to directly atomize to generate the raw material vapor in the interior of a mixing container, this raw material vapor is made to contain in carrier gas to introduce the carrier gas in a reaction chamber through a gas outflow tube and the carrier gas is deposited on a material to be treated in the reaction chamber. SOLUTION: A liquid raw material 1 is controlled in its dripping flow rate by a flow rate control valve 13, the raw material 1 is introduced in an intermediate tank 14 and the raw material 1 held once in the tank 14 is fed to an ultrasonic atomizer 11 via a liquid raw material feed pipe 16. Raw material vapor sent in an atomized raw material holding container 15 is atomized by this atomizer 11 to mix uniformly with carrier gas introduced in the container 15 through a carrier gas introducing tube 3. This mixed atomized raw material is fed to a reaction chamber 21 via a gas outflow tube 6 and is deposited on a material 22 to be treated being set in this chamber 21. Thereby, it can be prevented that the mixing ratio of the raw material vapor to the carrier gas is changed and the generation amount, mixing ratio and concentration of the raw material vapor are changed.
申请公布号 JPH10308388(A) 申请公布日期 1998.11.17
申请号 JP19970113263 申请日期 1997.05.01
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 MIYAKE KIYOO;SAWADA KAZUYUKI;ARAI YASUSHI
分类号 C30B25/16;C23C16/448;C23C18/12;H01L21/205;H01L21/31;H01L21/8242;H01L21/8246;H01L27/105;H01L27/108 主分类号 C30B25/16
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