| 摘要 |
A reference voltage generation circuit includes: a load unit having one end thereof connected to a higher voltage power supply line; an enhancement type n-channel MIS transistor having a drain thereof connected to the other end of the load unit, and a source thereof connected to a lower voltage power supply line; and a source follower circuit using a MIS transistor as a driving element, the source follower circuit having an input end thereof connected to the drain of the n-channel MIS transistor and having an output end thereof connected to a gate of the n-channel MIS transistor. A reference voltage is obtained at the drain of the n-channel MIS transistor. By the constitution, it is possible to obtain a stable reference voltage, and to incorporate the reference voltage generation circuit into an integrated circuit produced by integrating MIS transistors, without introducing an increase in production processes. It is also possible to reduce a consumed current of the reference voltage generation circuit.
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