发明名称 MANUFACTURE OF METALIZATION STRUCTURE
摘要 PROBLEM TO BE SOLVED: To provide a manufacture of a metalization structure having a superior electrical mobility, highly textured, and suitable for electrical connection or wiring. SOLUTION: The manufacture of a metalization structure comprises depositing a first lower layer 13 made of IVA family metal such as titan and having a thickness of approximately 90Åto 110Åon a substrate and after which, electrical depositing a layer made of at least one element selected from a group consisting of aluminum and aluminum alloy deposited on the layer 13 in such a way as to be in ohmic contact with the layer 13.
申请公布号 JPH10308363(A) 申请公布日期 1998.11.17
申请号 JP19980112526 申请日期 1998.04.22
申请人 INTERNATL BUSINESS MACH CORP <IBM>;TOSHIBA CORP 发明人 USUI TAKAMASA;DEHAVEN PATRICK W;RODBELL KENNETH P;FILIPPI RONALD G;YANG CHI-HUA;KATADA TOMIO;AOCHI HIDEAKI
分类号 C23C14/14;C23C14/34;C23C16/06;C23C28/02;H01L21/28;H01L21/285;H01L21/768;H01L23/532;(IPC1-7):H01L21/285 主分类号 C23C14/14
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