发明名称 |
MANUFACTURE OF METALIZATION STRUCTURE |
摘要 |
PROBLEM TO BE SOLVED: To provide a manufacture of a metalization structure having a superior electrical mobility, highly textured, and suitable for electrical connection or wiring. SOLUTION: The manufacture of a metalization structure comprises depositing a first lower layer 13 made of IVA family metal such as titan and having a thickness of approximately 90Åto 110Åon a substrate and after which, electrical depositing a layer made of at least one element selected from a group consisting of aluminum and aluminum alloy deposited on the layer 13 in such a way as to be in ohmic contact with the layer 13. |
申请公布号 |
JPH10308363(A) |
申请公布日期 |
1998.11.17 |
申请号 |
JP19980112526 |
申请日期 |
1998.04.22 |
申请人 |
INTERNATL BUSINESS MACH CORP <IBM>;TOSHIBA CORP |
发明人 |
USUI TAKAMASA;DEHAVEN PATRICK W;RODBELL KENNETH P;FILIPPI RONALD G;YANG CHI-HUA;KATADA TOMIO;AOCHI HIDEAKI |
分类号 |
C23C14/14;C23C14/34;C23C16/06;C23C28/02;H01L21/28;H01L21/285;H01L21/768;H01L23/532;(IPC1-7):H01L21/285 |
主分类号 |
C23C14/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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