发明名称 |
Method of producing an electro-optical device |
摘要 |
A method for producing an electro-optical device comprising a first photolithographic step of forming a transparent pixel electrode, a second photolithographic of forming a gate electrode and a gate wiring, a third photolithographic step of forming a contact holes in an insulator film leading to the pixel electrode and the gate wiring, a fourth photolithographic step of forming a source electrode and a drain electrode and a channel portion above the gate electrode, and a fifth photolithographic step of forming a contact hole in a passivation film and isolating the semiconductor active film below the source electrode, the drain electrode and the source wiring from other adjacent portions. The number of photolithographic steps can be reduced, to improve the yield and decrease the production cost, adjacent thin film transistors.
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申请公布号 |
US5837559(A) |
申请公布日期 |
1998.11.17 |
申请号 |
US19960745904 |
申请日期 |
1996.11.07 |
申请人 |
FRONTEC INCORPORATED |
发明人 |
KAWAHATA, KEN;NAKANO, AKIRA;FUKUI, HIROFUMI;HEBIGUCHI, HIROYUKI;YAMAMOTO, KENJI;IWASAKI, CHISATO |
分类号 |
G02F1/136;G02F1/1368;H01L21/336;H01L21/77;H01L21/84;H01L29/78;H01L29/786;(IPC1-7):H01L21/336 |
主分类号 |
G02F1/136 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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