发明名称 Low noise-high linearity HEMT-HBT composite
摘要 4-terminal HEMT-HBT composite devices, based upon monolithically integrated HEMT-HBT technology and configured in various topologies, are useful in a wide range of applications which currently utilize discrete MMICs. In particular, the 4-terminal topologies are easily configured as 3-terminal composite devices useful in various 2-port and 3-port MMIC circuit applications, such as low noise-high linearity amplifiers as well as mixers, which provide the benefits of a reduction in size, as well as corresponding cost while providing better performance than utilizing either HEMT or HBT devices individually.
申请公布号 US5838031(A) 申请公布日期 1998.11.17
申请号 US19960611265 申请日期 1996.03.05
申请人 TRW INC. 发明人 KOBAYASHI, KEVIN WESLEY;STREIT, DWIGHT CHRISTOPHER;OKI, AARON KENJI;UMEMTO, DONALD KATSU
分类号 H01L27/06;H01L21/8232;H03D7/00;H03D7/12;H03F1/32;H03F3/04;H03F3/193;H03F3/21;H03F3/345;(IPC1-7):H01L31/032;H01P3/08 主分类号 H01L27/06
代理机构 代理人
主权项
地址