发明名称 |
Low noise-high linearity HEMT-HBT composite |
摘要 |
4-terminal HEMT-HBT composite devices, based upon monolithically integrated HEMT-HBT technology and configured in various topologies, are useful in a wide range of applications which currently utilize discrete MMICs. In particular, the 4-terminal topologies are easily configured as 3-terminal composite devices useful in various 2-port and 3-port MMIC circuit applications, such as low noise-high linearity amplifiers as well as mixers, which provide the benefits of a reduction in size, as well as corresponding cost while providing better performance than utilizing either HEMT or HBT devices individually.
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申请公布号 |
US5838031(A) |
申请公布日期 |
1998.11.17 |
申请号 |
US19960611265 |
申请日期 |
1996.03.05 |
申请人 |
TRW INC. |
发明人 |
KOBAYASHI, KEVIN WESLEY;STREIT, DWIGHT CHRISTOPHER;OKI, AARON KENJI;UMEMTO, DONALD KATSU |
分类号 |
H01L27/06;H01L21/8232;H03D7/00;H03D7/12;H03F1/32;H03F3/04;H03F3/193;H03F3/21;H03F3/345;(IPC1-7):H01L31/032;H01P3/08 |
主分类号 |
H01L27/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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