发明名称 Process for preparing single crystal material and composite material for forming such single crystal material
摘要 A single crystal material is prepared by forming a layer of an amorphous substance over a surface of a substrate of a single crystal having the same chemical composition as that of the amorphous substance, the resulting composite material is heated to epitaxially grow the amorphous layer into a single crystal layer. A composite material for producing such a single crystal material is also disclosed which includes a substrate of a single crystal, and a layer of an amorphous substance having the same chemical composition as that of the substrate, the layer having such a thickness that the layer as a whole can epitaxially grow to make a single crystal layer.
申请公布号 US5837053(A) 申请公布日期 1998.11.17
申请号 US19950563383 申请日期 1995.11.28
申请人 INTERNATIONAL SUPERCONDUCTIVITY TECHNOLOGY CENTER 发明人 WANG, FUREN;MORISHITA, TADATAKA
分类号 C30B1/02;C30B29/22;H01L21/205;(IPC1-7):C30B1/02 主分类号 C30B1/02
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