发明名称 Line memory circuit
摘要 A line memory circuit is provided which simultaneously carries out line memory writing and line data comparison in order to improve high speed processing. The line memory circuit of the present invention has an information bit (line match/mismatch bit) encoded at the head of each line in the line memory circuit used in an encoding circuit, wherein encoding of a picture element data of the line is avoided when a matching result is obtained. In the line memory circuit, input picture element data are stored into a line memory, and the input data are sequentially compared with picture element data on the preceding line stored in the line memory. Picture element data on the preceding line are sequentially encoded during the next line. The line memory circuit completes encoding of input picture element data during a subsequent line where picture element data are inputted, which enables high speed encoding of the input picture element data.
申请公布号 US5838699(A) 申请公布日期 1998.11.17
申请号 US19970897001 申请日期 1997.07.18
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 IMANAKA, YOSHIFUMI
分类号 G11C7/00;G06T1/60;G11C15/00;H03M7/30;H04N1/413;H04N1/417;(IPC1-7):G06F7/02 主分类号 G11C7/00
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