发明名称 |
Method of manufacturing a semiconductor device |
摘要 |
A semiconductor device comprises silicon substrate 1 on which an integrated circuit is formed, first insulating layer 6 formed on silicon substrate 1, a capacitor comprising lower electrode 7 formed on first insulating layer 6, dielectric film 8 having a high dielectric constant and upper electrode 9, a second insulating film 11 having contact holes 13 which lead to lower electrode 7 and upper electrode 9 independently, diffusion barrier layer 17 which touches lower electrode 7 and upper electrode 9 at bottom of contact holes 13, and interconnection layer 15 formed on diffusion barrier layer 17. In diffusion barrier layer 17 at the bottom of contact hole 13, a lamellar region made of granular crystal is formed.
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申请公布号 |
US5837591(A) |
申请公布日期 |
1998.11.17 |
申请号 |
US19970803144 |
申请日期 |
1997.02.19 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
SHIMADA, YASUHIRO;INOUE, ATSUO;ARITA, KOJI;NASU, TORU;NAGANO, YOSHIHISA;MATSUDA, AKIHIRO |
分类号 |
H01L21/28;H01L21/02;H01L21/822;H01L27/04;H01L27/10;H01L27/115;(IPC1-7):H01L21/20 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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