PRODUCTION OF SEMICONDUCTOR, SEMICONDUCTOR WAFER AND SEMICONDUCTOR ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a method for producing a semiconductor by which the residence of a liq. raw material to cause the defects of thin coating on a semiconductor wafer and a semiconductor element to be produced is solved and the working ratio is improved. SOLUTION: In the method for producing a semiconductor including a coating forming stage in which thin coating is formed on the surface of a semiconductor substrate (wafer) by chemical vapor depositing reaction while a liq. raw material is vaporized and fed via a vaporizing nozzle 21 as a vaporizing means, a liq. raw material removing stage in which the liq. raw material remaining in the vaporizing nozzle 21 is removed by introducing the pressurized gas of an inert gas after the completion of the coating forming stage by the vaporizing nozzle 21 and before the start of the following coating forming stage is included, by which the residence of the liq. raw material in the vaporizing nozzle causing the generation of defects in the coating formation can be prevented.