| 摘要 |
PROBLEM TO BE SOLVED: To enhance the memory cell contact of a DRAM in area, by a method wherein the memory cell contact is formed through a self-aligned manner, and an opening provided to the base of the memory cell contact is kept small in area. SOLUTION: A gate insulating film 3 and a gate electrode 4 which extends in a first direction are formed on a semiconductor substrate 1. An insulating protective film 5 is formed on the upside and side wall of the gate electrode 4. Interlayered insulating layers 7 and 10 are formed on the semiconductor substrate 1, including the protective film 5. The interlayered insulating layers 7 and 10 are selectively etched, whereby an opening 12 is formed so as to reach the protective layer 5 and the semiconductor substrate 1. An opening 11 where the substrate 1 is exposed without being covered with the protective layers 5 and 6 is provided to the base of the opening 12. A capacitor where electric charge is stored corresponding to data to hold is formed in the opening 12. By this setup, the opening 11 gets smaller than the upper part of the opening 12 in opening area. |
