| 摘要 |
A projection exposure apparatus including structure for supplying illumination light, using a projection optical system for projecting a pattern of a first object onto a second object in cooperation with the illumination light, the projection optical system having a refraction optical element, controlling a changing unit (for changing a wavelength of illumination light) on the basis of an output of a detecting unit (for detecting a change in pressure around the projection optical system) so as to compensate a change in ratio, or so as to maintain a constant ratio, of reflective index between an atmosphere and the refraction optical element due to a change in pressure, and correcting a change in optical characteristic of the projection optical system, due to a factor other than the pressure change, without use of the wavelength changing unit; and a device manufacturing method including a step of projecting and transferring a device pattern of a mask onto a substrate by using the projection exposure apparatus.
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