| 摘要 |
PROBLEM TO BE SOLVED: To perform the processing of the light outputted from a light emitting element before and after the light emitting element and to provide the plural kinds of functions by differentiating the amounts of lattice mismatchings of crystal growing layers constituting the first, second and third optical function elements with respect to a semiconductor substrate. SOLUTION: The patterning mask of insulating materials such as SiO2 , SiNx and a-Si, wherein the lightguide directions of a region (growing region) in which a semiconductor substrate is exposed are different in the region where a diffraction grating 12 is formed and in the region the grating 12 is not formed, is formed on an n-InP substrate 11. Then, on the patterning substrate, a multiple quantum well structure 16, which is composed of a quaternary waveguide layer 13 comprising In0.85Gaa15 Asa33 Pa67 , a ternary quantum well layer 14 comprising Inx Ga1-x As and a quaternary waveguide layer 15 comprising Ina85 Gaa15 Asa33 Pa67 , and a p-InP clad layer 17 sequentially undergo crystal growing by an organic- metal gaseous-phase growing method. Thus, the transmission and reception of light can be performed with one piece of optical fiber. |
