Wafer surface modification for improved electrostatic chucking efficiency

摘要

A method of improving electrostatic chucking efficiency between a silicon wafer which has an oxide layer formed on a back side and a susceptor positioned in a wafer processing chamber wherein the back side is opposite to the side of the wafer to be processed for integrated circuit devices including the steps of first forming an electrically conducting layer on top of the oxide layer by transforming to a more hydrophilic oxide structure and then positioning the wafer on the susceptor with the electrically conducting layer contacting the susceptor.