| 摘要 |
PROBLEM TO BE SOLVED: To provide a photoresist composition high in transparency to far ultraviolet rays of <=248 nm a wavelength, especially, an ArF eximer laser, superior in resistance to dry etching, good in adhesion to a substrate and showing good solubility in an alkaline developing solution and having high sensitivity and resolution. SOLUTION: This photoresist composition contains a polymer obtained by polymerizing a polymer precursor including a vinyl monomer represented by the formula and a light exposure acid generating agent generating an acid by exposure to light. In the formula, R<1> is an H atom or a methyl group, R<2> is a 7-22C cross-linked cyclic hydrocarbon group, each of (m) and (n) is 0 or 1 and R<3> is an H atom, a methyl or acetyl group. |
