| 摘要 |
PROBLEM TO BE SOLVED: To form the hetero-junction having the expanded layer formed on a relaxation layer at the low-level defects by forming the first semiconductor layer having the first lattice constant on the substrate constituted of the material having the second lattice constant that is different from the first lattice constant. SOLUTION: A device 10 is a hetero-junction semiconductor device and has a semiconductor substrate 11, a relaxation semiconductor layer 12 formed on the substrate 11 and an expanding semiconductor layer 14 formed on the relaxation layer 12. The substrate 11 and the expanding semiconductor layer 14 are composed of the material having the lattice constant different from that of the relaxation semiconductor layer 12. Ideally, the substrate 11 is composed of silicon, the relaxation layer 12 is composed of Si1-x Gex and the expanding layer 14 is composed of silicon. The device 10 has a source region 16, a drain region 17, a gate dielectric layer 18 formed on the expanding layer 14, a source electrode 21, a gate electrode 22 and a drain electrode 23. The gate dielectric layer 18 and the gate electrode 22 form the gate control structure together. These elements of the device 10 are formed by using the conventional technology.
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