发明名称 HALFGELEIDER VAN HET GEVORMDE GLASTYPE.
摘要 <p>A semiconductor device according to the present invention comprises a silicon pellet adhesively fixed with a soft solder between a pair of leads provided with headers and having a thermal expansion coefficient greatly different from those of the silicon pellet and mould glass. An assembly including the silicon pellet is then glass-moulded to provide semiconductor device. The leads are provided with a film having low wetness to glass for preventing a breakage of the mould glass due to the difference between the thermal expansion coefficients.</p>
申请公布号 NL7603580(A) 申请公布日期 1976.10.11
申请号 NL19760003580 申请日期 1976.04.06
申请人 HITACHI LIMITED TE TOKIO. 发明人
分类号 H01L23/29;H01L23/31;H01L23/492;(IPC1-7):01L23/02;01L23/48;01L29/86 主分类号 H01L23/29
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