| 摘要 |
A method of correcting light proximity effects includes the steps of: compressing design data of a circuit pattern (step S1); generating a projection image which is formed during a process of transferring a pattern onto a wafer, the projection image being generated according to the design data (step S2); predicting the size of the transferred pattern, said prediction being performed from the projection image (step S3); calculating the difference between the predicted size of the transferred pattern and the pattern size designated by the design data (step S4); correcting the compressed design data by an amount equal to the above-described difference (step S5); judging whether the correction amount is within an allowable range (step S6); expanding the corrected data after the correction amount has fallen within the allowable range (step S7); and outputting the resultant data (step S8). |
