METHOD FOR TEXTURING A SILICON SURFACE OF ANY CRYSTALLOGRAPHIC ORIENTATION USING AN ISOTROPIC ETCH AND PHOTOLITHOGRAPHY

摘要

In this process for etching a flat dendritic silicon crystal in order to use it as a photovoltaic cell, a predetermined configuration of etching-resistant material is applied to a surface 111 of the silicon crystal, the configuration covering substantially the entire surface 111, and the surface 111 is etched by means of an isotropic etching material until the etching material reveals, by undermining, the configuration of the etching-resistant material substantially completely, thereby forming a set of spikes with sloping sides on the silicon crystal, the isotropic etching material and the configuration cooperating in such a way that the sloping sides have a slope which traps substantially in the interior of the silicon crystal all the light striking the silicon crystal.