发明名称 |
MANUFACTURE OF DIFFRACTION GRATING, SEMICONDUCTOR LASER MANUFACTURED BY USING THE SAME, AND LIGHT APPLYING SYSTEM USING THE SAME |
摘要 |
PROBLEM TO BE SOLVED: To improve the reproducibility, mass-productivity, and single-mode selectivity of a diffraction grating by forming an inverted pattern by etching back a photoresist and forming a phase-inverted diffraction grating on the surface of a crystal by using a resist pattern and a silicon oxide film pattern. SOLUTION: A buried photoresist pattern 10 is obtained by etching back a photoresist until the surface of a silicon oxide film pattern 7 is exposed. Then a pattern having the periodicity of silicon oxide film pattern 7 and the inverted photoresist pattern 10 is formed by etching the exposed silicon oxide film pattern 7 by using a resist pattern 11 for etching mask formed in a prescribed area as an etching mask and stripping off the resist pattern 11. Thereafter, a phase-shifting diffraction grating 12 is obtained by etching the surface of a substrate 1 by using the pattern as a mask and removing the etching mask.
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申请公布号 |
JPH10303175(A) |
申请公布日期 |
1998.11.13 |
申请号 |
JP19970108572 |
申请日期 |
1997.04.25 |
申请人 |
HITACHI LTD;HITACHI CHIYOU LSI SYST:KK |
发明人 |
MIYAZAKI MASARU;SHINODA KAZUNORI;ISHIKAWA SEIJI;AOKI MASAHIRO |
分类号 |
G02B5/18;H01L21/306;H01S5/00;(IPC1-7):H01L21/306;H01S3/18 |
主分类号 |
G02B5/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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