发明名称 MANUFACTURE OF DIFFRACTION GRATING, SEMICONDUCTOR LASER MANUFACTURED BY USING THE SAME, AND LIGHT APPLYING SYSTEM USING THE SAME
摘要 PROBLEM TO BE SOLVED: To improve the reproducibility, mass-productivity, and single-mode selectivity of a diffraction grating by forming an inverted pattern by etching back a photoresist and forming a phase-inverted diffraction grating on the surface of a crystal by using a resist pattern and a silicon oxide film pattern. SOLUTION: A buried photoresist pattern 10 is obtained by etching back a photoresist until the surface of a silicon oxide film pattern 7 is exposed. Then a pattern having the periodicity of silicon oxide film pattern 7 and the inverted photoresist pattern 10 is formed by etching the exposed silicon oxide film pattern 7 by using a resist pattern 11 for etching mask formed in a prescribed area as an etching mask and stripping off the resist pattern 11. Thereafter, a phase-shifting diffraction grating 12 is obtained by etching the surface of a substrate 1 by using the pattern as a mask and removing the etching mask.
申请公布号 JPH10303175(A) 申请公布日期 1998.11.13
申请号 JP19970108572 申请日期 1997.04.25
申请人 HITACHI LTD;HITACHI CHIYOU LSI SYST:KK 发明人 MIYAZAKI MASARU;SHINODA KAZUNORI;ISHIKAWA SEIJI;AOKI MASAHIRO
分类号 G02B5/18;H01L21/306;H01S5/00;(IPC1-7):H01L21/306;H01S3/18 主分类号 G02B5/18
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