| 摘要 |
PROBLEM TO BE SOLVED: To secure sufficient storage capacity while reducing the memory capacitor of DRAM, suppressing its height low and suppressing the generation of step and to provide high reliability by preventing the occurrence of short- circuiting or the like even when a semiconductor element is made further fine and highly integrated. SOLUTION: A storage contact 17 for exposing one part of the surface of source diffusion layer 7 is formed in the manner of self-matching by etching while using a side wall formed on the side wall of contact pattern for polycrystalline silicon 14. Further, polycrystalline silicon 18 is formed and patterned while filling the inside of storage contact 17 and being connected with the polycrystalline silicon 14. Afterwards, a silicon oxide film and this side wall are removed by wet etching. |
