| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor optical function element which is small in dependency on polarization of gain, in a semiconductor optical amplifier element, and is favorable in temperature property, suppressing the overflow of electrons from an active layer to a clad layer, in a visible radiation or an infrared ray laser. SOLUTION: This semiconductor optical amplifier 10 is a semiconductor optical amplifier 600μm in element length made on an InP substrate, and this is equipped with stratified structure which has a carrier injection layer 22 of different conductivity type from the conductivity type of the clad layer between the active layer 20 of a compressive strained quantum well and the active layer 24 of an expansive distorted quantum well. This is forming a current path which goes by way of the carrier injection layer 22, the active layer 24, and an upper clad layer 28 between a central electrode 34 and an upper electrode 32 and also forming a current path which goes by way of the carrier injection layer 22, the active layer 20, and a lower clad layer 16 between the central electrode 34 and the lower electrode 36.
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