| 摘要 |
PROBLEM TO BE SOLVED: To form a uniform metal silicide film having a low resistance and a high melting point by removing a titanium film after depositing the titanium film on a semiconductor while the semiconductor is maintained at a temperature below a specific substrate temperature. SOLUTION: If a fluorine-based contaminant 102 exists on and near the surface of a silicon semiconductor 101 due to the contamination of the surface of the semiconductor 101 when the surface is subjected to reactive ion etching, etc., a titanium film 103 is formed on the contaminated surface of the semiconductor 101 at a substrate temperature of below 500 deg.C. After the contaminant on the surface of the semiconductor 101 fetches an impurity through the reaction to the titanium film 103 and the titanium film 103 is removed by chemical etching, a clean less-damaged silicon surface 105 is formed. Therefore, a highly heat-resistant silicide film having a low electrical resistance can be realized. |
