发明名称 ELECTRON BEAM MASK PLOTTING METHOD
摘要 PROBLEM TO BE SOLVED: To improve throughput by imparting information on the presence or absence of proximity effect correction in each of parts where dimensional accuracy is severe and parts where the dimensional accuracy is less severe and continuously plotting the presence and absence of the proximity effect correction with this information at the time of plotting. SOLUTION: An electron beam 2 accelerated by an acceleration voltage control 1 is cast through a blanker 3 for determining an exposure time and an electronic lens 4 onto a mask 5. On the other hand, the patterns 6 to be plotted are sent through a proximity decision section 7 and through a proximity effect correction unit 8 or directly to an exposure setting unit 9. At this time, the patterns 6 on the mask 5 are divided to the parts where the dimensional accuracy is severe and the parts where the dimensional accuracy is less severe. The plotting is continuously executed at one time by imparting the information on the presence of the proximity effect correction to the patterns of the core part where the dimensional accuracy is severe and the information on the absence of the proximity effect correction to other light shielding body parts and the plotting patterns of peripheral circuits, by which the relative position accuracy of the patterns of the core parts and the patterns of the peripheral circuit part is maintained.
申请公布号 JPH10301255(A) 申请公布日期 1998.11.13
申请号 JP19970105680 申请日期 1997.04.23
申请人 HITACHI LTD 发明人 KAWASAKI KATSUHIRO;SASAKI MINORU
分类号 G03F1/76;G03F7/20;H01L21/027 主分类号 G03F1/76
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