| 摘要 |
PROBLEM TO BE SOLVED: To enhance reliability and improve yield, by selectively introducing impurity to a patterned semiconductor film and thus forming source, drain and channel regions. SOLUTION: A part 5a of a semiconductor film to be source, drain and channel regions is formed on the entire surface on a gate insulating film. Then, a photoresist film 9 is applied on the entire surface, and an aperture portion 9a is provided in the resist 9 by photolithography using a mask pattern so as to expose a part 3b of a gate electrode wiring layer. A gate insulating film 4 and a semiconductor film 5a are continuously etched from the aperture portion, thus forming the aperture 9a. Then, the photoresist film 9 is removed and fluoric acid treatment is carried out, thus removing a native oxide while removing residual organic substances of the resist. Thus, the exposed part 3b of the gate electrode wiring layer and the surface of the semiconductor film 4 are cleaned. Then, the remaining portion of the semiconductor film is formed to cover the entire surface of the substrate including the aperture. |
