| 摘要 |
PROBLEM TO BE SOLVED: To increase the capacity of capacitor without increasing a cell area and to easily control the capacity of capacitor. SOLUTION: In a capacitor overbit line (COB) process for forming the capacitor higher than a bit line, an insulating film 70 is formed on this bit line, a hole 80 reaching this bit line is formed there, a 1st conductive film 90 is formed in the hole 80 and on the insulating film 70, and this film is formed with a step. Next, a nitride film 100 is formed on the 1st conductive film 90, afterwards, a side wall is formed around this step by etching back this film and by leaving the 1st conductive film 90 surrounded with the side wall by etching the 1st conductive film 90 with this side wall as a mask, the counter area of capacitor in the shape of vertical fin is increased. |
