| 摘要 |
PROBLEM TO BE SOLVED: To suppress the growth of crystalized layer and to efficiently form ruggedness on the surface of amorphous silicon. SOLUTION: Heat treatment at a 1st temperature is executed to an amorphous silicon stack 3, and a nucleus 4 is formed on the surface of amorphous silicon stack 3 by irradiating a material to become a rugged nucleus. Then, by exposing the amorphous silicon stack 3 forming the nucleus 4 under plasma while executing heat treatment at a 2nd temperature lower than the 1st temperature, hemi-spherical-grains(HSG) 7 are formed on the surface of amorphous silicon stack 3. |
