| 摘要 |
PROBLEM TO BE SOLVED: To suppress the effect of side lobe while reducing the spot diameter smaller than the diffraction limit at the time of exposing a photosensitive layer by irradiating with a light condensed through an objective lens. SOLUTION: At the time of exposing a photosensitive layer by irradiating with a light condensed through an objective lens, a phase shift mask 41 having three or more substantially circular regions arranged concentrically around the optical axis while being phase shifted differently is disposed in an exposing optical system. After a phase shift is generated in the incident pupil plane by the phase shift mask 41 relative to the wave front of a light incident to the objective lens, the photosensitive layer is exposed. According to the arrangement, the spot diameter is reduced smaller than the diffraction limit and all side lobes occurring in the vicinity of amain spot has a peak value within 5% that of the main spot. |
