| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method by which a semiconductor device which is improved in electrical and mechanical characteristics can be manufactured, by suppressing the side etching amount of a lower electrode, preventing the disconnection or corrosion of an electrode pad, and coping with an mounting in high density. SOLUTION: In a manufacturing method, an insulating film 16 is formed on the entire surface of a semiconductor substrate 12 having an electrode pad 14 so that the pad 14 may be exposed, and then, a common electrode film 18 is formed on the entire surface. After the film 18 is formed, a photosensitive resin 20 is patterned so that the resin 20 is formed in the forming area of a projecting electrode 22. Then, after a hydrophilic property is given to the surface of the resin 20 by a wet method, the mushroom-shaped projecting electrode 22 having a pent roof is formed in the opening of the resin 20, and the resin 20 below the pent roof of the electrode 22 is shaped by anisotropic etching and softened. In addition, the common electrode film 18 is patterned by using the electrode 22 and the resin 20 below the electrode as a mask. |
