| 摘要 |
PROBLEM TO BE SOLVED: To improve maintainability of a film forming equipment, increase growth speed and reduce the total amount of used gas, by forming at least one out of two layers sandwiching an InGaAlP light emitting layer, of III-V compound which does not contain In. SOLUTION: An N-type GaAs buffer layer 2, an N-type GaAlAs lower side clad layer 3, a nondoped InGaAlP light emitting layer 4, a P-type GaAlAs upper side clad layer 5, a P-type GaAs cap layer 6 and a P-side electrode 7 are laminated on the surface of an N-type GaAs substrate 1 in this order. The light emitting layer 4 is composed of Inx (Gay Al1-y )1-x P where x and y are set as 0<x<1 and 0<y<1. The clad layers 3, 5 are formed of a binary or ternary III-V compound which does not contain In. Since GaAlAs is used in the clad layers 3, 5, growth is easy. Since In is not supplied, the contents of In and P are reduced. |
