| 摘要 |
PROBLEM TO BE SOLVED: To form a ferroelectric film for a short time at a lower temperature than the conventional annealing temperature, by forming an amorphous film containing metallic elements constituting a dielectric oxide on a substrate, processing the amorphous film in a nitrogen monoxide gas atmosphere thermally, and forming a crystalized ferroelectric thin film. SOLUTION: A target is set in a chamber and a substrate 1 in which a thermal oxide film 2, a Ta film 3 and a lower electrode layer 4 are formed successively is set to a substrate holder opposite thereto. An Ar gas is introduced into the chamber, and the substrate 1 is sputtered for 13 minutes at a sputter rate of 15 nm/min at a throw-in power of 200 W so as to form a film thereon while adjusting an amorphous film made of STB of 200 nm in film thickness to be Sr/Ta=0.4 and Bi/Ta=1.4. Then, the obtained amorphous film is heated at 550-750 deg.C for 30 minutes through RTA method for crystalization, so that a ferroelectric film 5 is obtained. A nitrogen monoxide (N2 O) gas is used as an annealing atmosphere. |
