| 摘要 |
PROBLEM TO BE SOLVED: To obtain a structure in which electrons surely pass through a quantum box by providing a source electrode formed on a semiconductor surface of the quantum box and a drain electrode in which carriers injected from the source electrode are flowed through the quantum box. SOLUTION: A drain layer 11 and a tetrahedral-shaped receoss(TSR) concavity forming layer 12 are grown on a substrate 10. A SiO2 film is formed on the TSR forming layer 12. A quantum box 14A is formed by growing a barrier layer 13, a well layer 14 and a barrier layer 15 in the TSR forming layer 12, while leaving a mask 31 consisting of SiO2 . An impurity portion 22 of a source layer is formed by implanting Si ions from a surface of a cap layer 17 on the quantum chamber 14A to the inside of the barrier layer 15. The TSR forming layer 12 consisting of SiO2 is exposed on a portion on which a drain electrode is to be formed. The portion on which the drain electrode is to be formed is exposed by etching from the TSR forming layer 12 to the drain layer 11. This enables the carriers injected into a TSR quantum dot to pass through the quantum chamber. |
