MANUFACTURE OF PLATINUM METAL PATTERN BY LIFT-OFF METHOD

摘要

PROBLEM TO BE SOLVED: To easily form a platinum metal pattern so that the formation of the pattern may be incorporated in the manufacturing process of a DRAM memory cell by forming a platinum metal layer on a mask over a silicon oxide layer and on the exposed surface of a substrate and etching off the silicon oxide film and the platinum metal layer on the mask. SOLUTION: An etching stop layer 2, a silicon oxide layer 3, and a mask layer 4 are successively formed on a substrate 1. The mask layer 4 is composed of a photoresist layer having an opening at the part of a platinum pattern. The silicon oxide layer 3 is etched to the etching stop layer 2 by using the mask 4. Then the exposed etching stop layer 2 is removed by isotropic etching and the substrate 1 carrying a connecting pattern for the platinum pattern is exposed. After a platinum metal 5 is sputtered on the entire surface of this arrangement and the etching of silicon oxide is performed, only the platinum forming the platinum pattern 5 is left on the surface of the substrate 1.