发明名称 RESIST MATERIAL AND FORMING METHOD OF RESIST PATTERN
摘要 PROBLEM TO BE SOLVED: To obtain both of high definition and high resolution, and environmental durability, especially, excellent durability against bad influences of a weak basic component in an atmosphere by adding a nitrile compd. instead of a basic compd. SOLUTION: One surface of the resist material contains an acid-sensitive compound, an acid-producing agent which produces an acid by exposure of radiation, and a nitrile compd. The acid-sensitive compd. has a structural unit in which an alkali-soluble group protected by a protecting group is released by an acid to change the compd. into alkali-soluble. It is preferable that the nitrile compd. used does not contain an aromatic ring in the molecule in order to avoid strong absorption in ArF lithography. The amt. of the nitrile compd. to be added is preferably >=1×10<-6> mol/cm<3> in terms of the density of nitrile groups per unit volume in a resist film usually formed. If the density of nitrile groups is less than 1×10<-6> mol/cm<3> , enough environmental durability can not be obtd.
申请公布号 JPH10301285(A) 申请公布日期 1998.11.13
申请号 JP19970112698 申请日期 1997.04.30
申请人 FUJITSU LTD 发明人 TAKECHI SATOSHI;KODACHI AKIKO
分类号 G03F7/004;G03F7/039;G03F7/38;H01L21/027;H01L21/312;(IPC1-7):G03F7/039 主分类号 G03F7/004
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