| 摘要 |
PROBLEM TO BE SOLVED: To provide high reliability by securing a sufficient storage capacity while suppressing the generation of step by suppressing the capacitor of DRAM small and low even when a semiconductor element is further made fine and highly integrated. SOLUTION: A side wall 20 composed of a polycrystalline silicon film is formed and connected with a polycrystalline silicon film 14 on the side face of side wall composed of a silicon oxide film. In this case, a storage node 21 in complicated structure is formed by integrating the polycrystalline silicon films 14 and 17 and the side wall 20. While using a silicon nitride film 12 as a stopper, the silicon oxide film and this side wall are removed by aerolotropic wet etching. |
