发明名称 RESIST COMPOSITION AND METHODS FOR FORMING PATTERN AND MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide the resist composition high in sensitivity and resolution and capable of forming a positive or negative pattern superior in dimensional control by adding a compound converted into a heat-decomposable ester by reaction with an acid produced by decomposition of an acid precursor, and after exposure, producing an acid by heat treatment. SOLUTION: The resist composition contains the compound converted into the heat-decomposable ester by reaction with the acid produced by decomposition of the acid precursor, and after exposure; producing an acid by heat treatment, a medium having reactivity of changing alkali solubility by an acid- catalyzed reaction and a compound to be allowed to produce an acid by irradiation with activated chemical rays. The compound convertible into the heat- decomposable ester by the acid catalyst is the ones having one kind of structure selected from acetals and ketals to be used in an amount of 3-30 weight % of the total solids of the resist, thus permitting the obtained pattern to be high in sensitivity and resolution and superior in dimensional controllability.
申请公布号 JPH10301265(A) 申请公布日期 1998.11.13
申请号 JP19970108567 申请日期 1997.04.25
申请人 HITACHI LTD;HITACHI CHEM CO LTD 发明人 SAKAMIZU TOSHIO;ARAI TADASHI
分类号 G03F7/004;G03F7/039;H01L21/027;(IPC1-7):G03F7/004 主分类号 G03F7/004
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