发明名称 RADIATION CORRECTING METHOD AND CIRCUIT
摘要 PROBLEM TO BE SOLVED: To control a driving current in a switching transistor by detecting an increasing in total dosage of radiation. SOLUTION: A radiation correcting circuit comprises a radiation detecting semiconductor 1 in which a leak current changes with the total dosage of radiation, a constant current circuit 2 to transform the leak current into voltage and a driving current control element 4 to change a resistance value with the transformer voltage in such a manner that the resistance value is increased when hFE of a switching transistor is high and it is decreased when hFE becomes low with much radiation. The driving current control element 4 has a switching pulse input terminal 5 connected to the base of the switching transistor 6.
申请公布号 JPH10300859(A) 申请公布日期 1998.11.13
申请号 JP19970112283 申请日期 1997.04.30
申请人 NEC CORP 发明人 MISU HIROYUKI
分类号 G01T1/24;H01L31/09;(IPC1-7):G01T1/24 主分类号 G01T1/24
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