发明名称 LOW NOISE AMPLIFIER EMPLOYING MICROWAVE MONOLITHIC IC
摘要 <p>PROBLEM TO BE SOLVED: To obtain an excellent noise figure characteristic by decreasing a parasitic resistive component, in an input matching circuit in a form of not much disturbing monolithic IC processing. SOLUTION: An integrated circuit 16 is provided with an input matching circuit 17 or the like having an amplifier FET 1 and a series spiral inductor 7, and an externally mounted inductor component 18 is placed at the outside of the integrated circuit 16 as a component of the input matching circuit 17 in place of a conventional parallel spiral inductor. Thus, the parasitic resistive component of the parallel inductor 18 in the input matching circuit 17 is reduced more than that of the conventional parallel spiral inductor and the noise figure is greatly enhanced.</p>
申请公布号 JPH10303661(A) 申请公布日期 1998.11.13
申请号 JP19970123249 申请日期 1997.04.25
申请人 NEW JAPAN RADIO CO LTD 发明人 KIMIJIMA MASAYUKI
分类号 H01L21/822;H01L27/04;H03F3/60;(IPC1-7):H03F3/60 主分类号 H01L21/822
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