发明名称 FIELD EMITTER FABRICATION USING MEGASONIC ASSISTED LIFT-OFF
摘要 <p>A method for removing a lift-off layer (214) and an overlying closure layer (218) formed during manufacture of a field emitter structure having at least one emitter (220) on a substrate (202) comprising: a) immersing the field emitter structure in an etchant which attacks the lift-off layer (214) and b) activating a vibrational transducer (410) immersed in the etchant to subject the lift-off and closure layers to vibrational forces which aid in removing these layers (214, 218) from the emitter structure (210, 206, 220). The transducer (410) is preferably a megasonic transducer. After rinsing etchant from the emitter structure, the emitter structure may be dried using an alcohol-based fluid displacement drying process.</p>
申请公布号 WO1998050935(A1) 申请公布日期 1998.11.12
申请号 US1998002458 申请日期 1998.02.11
申请人 发明人
分类号 主分类号
代理机构 代理人
主权项
地址