Halbleitereinrichtung des Typs mit hoher Durchbruchspannung,申请号DE19944424738-传众专利搜索

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发明名称	Halbleitereinrichtung des Typs mit hoher Durchbruchspannung
摘要
申请公布号	DE4424738(C2)	申请公布日期	1998.11.12
申请号	DE19944424738	申请日期	1994.07.13
申请人	MITSUBISHI DENKI K.K., TOKIO/TOKYO, JP	发明人	TERASHIMA, TOMOHIDE, ITAMI, HYOGO, JP
分类号	H01L29/06;H01L29/08;H01L29/10;H01L29/739;H01L29/78;H01L29/786;(IPC1-7):H01L29/78	主分类号	H01L29/06
代理机构		代理人
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