发明名称 |
Semiconductor light emitting device and method for producing the same |
摘要 |
<p>A light emitting device includes: a plurality of n-type III-V group compound semiconductor layers; a plurality of p-type III-V group compound semiconductor layers; and an active layer. Carbon atoms and II-group element atoms are both added to at least one of the plurality of p-type III-V group compound semiconductor layers. Alternatively, carbon atoms and Si atoms are both added to at least one of the plurality of n-type III-V group compound semiconductor layers. Another semiconductor light emitting device has a current blocking structure formed on the double hetero (DH) junction structure, and the current blocking structure at least includes a two-layered n-type current blocking layers including a Se-doped n-type first current blocking layer provided closer to the DH junction structure and a Si-doped n-type second current blocking layer formed on the n-type first current blocking layer. <IMAGE></p> |
申请公布号 |
EP0877455(A2) |
申请公布日期 |
1998.11.11 |
申请号 |
EP19980303545 |
申请日期 |
1998.05.06 |
申请人 |
SHARP KABUSHIKI KAISHA |
发明人 |
OKUBO, NOBUHIRO;ISHIDA, MASAYA;AKAGI, YOSHIRO;WATANABE, MASANORI;KONUSHI, FUMIHIRO |
分类号 |
H01S5/32;H01L33/14;H01L33/30;H01S5/22;H01S5/223;H01S5/30;(IPC1-7):H01S3/19;H01L33/00 |
主分类号 |
H01S5/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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